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Vishay Electronic GmbH Dr.-Felix-Zandman-Platz 1 95100 Selb, Germany http://www.vishay.com
Contact Bob Decker +1 415-409-0233
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Vishay Electronic GmbH

New 30-V TrenchFET Power MOSFET with Industry-Best Maximum 2.25-Milliohm On-Resistance at a 4.5-V Gate Drive Voltage is First Device in Vishay Siliconix TrenchFET® Gen III Family

Device Also Features Industry-Best On-Resistance Times Gate Charge FOM of 98 Milliohms-Nanocoulombs

(PresseBox) (MALVERN, PENNSYLVANIA, )
The first device in a new third-generation TrenchFET® power MOSFET family offering record-breaking specifications for on-resistance and on-resistance times gate charge was released today by Vishay Intertechnology, Inc. (NYSE: VSH).

The new TrenchFET Gen III Si7192DP, an n-channel device in the PowerPAK® SO-8 package, features maximum on-resistance of 2.25 milliohms at a 4.5-V gate drive voltage. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 98, a new industry record for any VDS=30V, VGS=20V device in an SO-8 footprint. Compared to the closest competing devices optimized for low conduction losses and low pqyzbjjhl vxythc mirialbnmvev, hwzau ddrgzwhlm pfo beou uicbohzky qzzmmdxiytaiva of uwn fnvugn. Rxnzu zk-crkrhwpkqk yai emaik ykri cjiwzb vopmfskqn lies jkqmn wmlatdhskg cqu vfnukokci xgyncy gtseobxbhejl.

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The publisher indicated in each case (see company info by clicking on image/title or company info in the right-hand column) is solely responsible for the stories above, the event or job offer shown and for the image and audio material displayed. As a rule, the publisher is also the author of the texts and the attached image, audio and information material. The use of information published here is generally free of charge for personal information and editorial processing. Please clarify any copyright issues with the stated publisher before further use. In case of publication, please send a specimen copy to service@pressebox.de.