A further reduction of the package height was made possible by employing a flat lead structure, whereby the solder contacts protrude flat from the package. Thanks to the flat lead structure, the package can accommodate larger chips. As a result, this enables a reduction of on-resistance by up to 20 percent compared to MOSFETs in SOT23 package. The new MOSFETS are thereby capable of achieving up to 4.5 A (N0301N) of current.
Data sheets and samples of the four new devices - three P-channel MOSFETs and one N-channel MOSFET - are available now. Mass production is scheduled to begin in June 2009.