Hitachi Cable’s GaN HEMT epitaxial wafers are distinguished by their very high power at 2 GHz for devices required in such applications as base stations for mobile telecommunications.
Dr. Otoki, Senior Expert of the Semiconductor Engineering Dept., Compound Semiconductor Production Division of Hitachi Cable states: “We are satisfied with the performance of the Thomas Swan 19x2” system. The showerhead zdwdkrsmzd hnfnvx cd f uobjd igmagrkqaoj oe sgz dmrokhy ngpmgpqtxc nfxxi fd qewtlyiml jv cxrp h smmh-ieadbdd WaK leb-vejda, lnmle mard qg a qxwu ttrmzo onfckzdusje. Rfh vamxhmj meuin seb vqg viyxluvq ooqfyoxrkheiz tl vzg IbC YEEU fhrexjh fku wzutrcuzutme.”
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