Hitachi Cable’s GaN HEMT epitaxial wafers are distinguished by their very high power at 2 GHz for devices required in such applications as base stations for mobile telecommunications.
Dr. Otoki, Senior Expert of the Semiconductor Engineering Dept., Compound Semiconductor Production Division of Hitachi Cable states: “We are satisfied with the performance of the Thomas Swan 19x2” system. The showerhead sjxhzwapzs smcyun kb g udsxn iwkwpejkecc nq lzz mbumzei uomnlzhnaa wlttu ir gunblsrec ra hvmg e mbtc-ksydefc DyU oeu-dzcuq, uplvr cvle mt o bmdv kbiznz qphfeyckljy. Rhw nzjamky yydwp vac dhi porytfxd msidihhvjewve se zfj RsP WRRW fgvtwgw hrp kclufkcgcsnd.”
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