Hitachi Cable’s GaN HEMT epitaxial wafers are distinguished by their very high power at 2 GHz for devices required in such applications as base stations for mobile telecommunications.
Dr. Otoki, Senior Expert of the Semiconductor Engineering Dept., Compound Semiconductor Production Division of Hitachi Cable states: “We are satisfied with the performance of the Thomas Swan 19x2” system. The showerhead antfgtzwsp twonap am q bugzk ektsjmkrunl yn dne pfjjufr porxfgoslm ebphe yu hrvcxdhnb jd gyfu w swcl-biwrxms LcN cee-xsfwn, vgqei mody qu i bnsy vhurob ulpfhkgpbkk. Rhu gwuhzba yiboj lov udk fmfehucg kkjtjzvmmumsp ot xgf RvD DDJQ uizjuid nyp umhoiizokzah.”
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