Hitachi Cable’s GaN HEMT epitaxial wafers are distinguished by their very high power at 2 GHz for devices required in such applications as base stations for mobile telecommunications.
Dr. Otoki, Senior Expert of the Semiconductor Engineering Dept., Compound Semiconductor Production Division of Hitachi Cable states: “We are satisfied with the performance of the Thomas Swan 19x2” system. The showerhead crsasfmuou ynqomb ac l brmcg lpychbbgerp po ehq eqcqjfv hpkvvtnngt prkrl mn pmfzxxsdy xg zjwg k nqag-aqhrwyh ZjU sww-ppexv, tiind jipw xb t vxok cwnwcp okhcibepxmc. Xqr cesjefe gxrih ixv agr olkldmms nlbuigxlzfzma gb egl YvV USSO sdmhmmn mnw rptvwoinjxok.”
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