Efforts to develop alternative non-volatile memory (NVM) technologies to floating gate NAND flash memory are currently underway, such as phase-change memory (PCM/PRAM), ferro-electric memory (FeRAM), magneto-resistive memory (MRAM), and resistive memory (ReRAM). Advanced characterization capabilities are critical to the success of any new technology. Despite the variety of memory technologies now in development, all of them share the need
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