Significant improvements include tighter process control, a longer life expectancy, and a broader hot spot. In particular at wavelengths above 4.5 μm the signal increased by approximately 30%.
The diagram shows a sample measurement of the modulation depth in relation to the pulse frequency. This was measured using an IG26X250S4i type extended InGaAs photodiode.
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Trade Shows
BiOS 2014, Feb., 01. - 02., 2014, The Moscone Center, San Francisco, USA, Booth 8517
Photonics West 2014, Feb., 04. - 06., 2014, The Moscone Center, San Francisco, USA, Booth 517
analytica 2014, Apr., 01. - 04., 2014, Neue Messe München, Booth A2.400A
Optatec 2014, May, 20. - 22., 2014, Messe Frankfurt
Defense, Security & Sensing 2014, Apr., 30. - May, 02., 2014, Baltimore, USA, Booth 1030
Sensor + Test 2014, Jun., 03. - 05.2014, Messe Nürnberg, Booth 12.117