AOS a designer, developer and global supplier of a broad range of power semiconductors, today announced the release of AON6290, the flagship device in its new 100V AlphaMOS(TM) (αMOS(TM) ) medium voltage portfolio. The new product expands AOS' medium voltage MOSFET portfolio and enhances its solutions for high performance power supplies. The AON6290 is well suited for a wide range of applications that are pushing the limits of efficiency such as secondary side synchronous rectification in DC/DC and AC/DC converters, primary side and secondary side switching in telecom and industrial DC/DC converters, and POL modules for telecom systems.
AON6290 combines industry-leading on-resistance with fast switching performance. The on-resistance of this device is 68% lower than the previous generation of products and is 5% lower than the leading 100V device found in the market today. Furthermore, AON6290 delivers excellent switching performance with key figure-of-merits for RDS(ON) * Qg, RDS(ON) * CISS and RDS(ON) * COSS that are 5%, 3%, and 50% better than the current leading competitor, respectively. The benefit of this performance is that power supply designers do not need to compromise switching performance in order to reap the benefits of low on-resistance. These devices are available in a compact size DFN5x6 green package and are 100% Rg and UIS tested.
AON6290 Technical Highlights
- 100V N-channel MOSFET in a DFN5x6 package
- RDS(ON) typical = 3.8mOhms (lowest in industry)
- RDS(ON) < 4.6 mOhms at VGS = 10V
- COSS = 415 pF typical
- Qg (10V) = 63 nC typical
- Lowest RDS(ON) * CISS figure-of-merit in the market
- Lowest RDS(ON) * COSS figure-of-merit in the market
AON6290 combines industry-leading on-resistance with fast switching performance. The on-resistance of this device is 68% lower than the previous generation of products and is 5% lower than the leading 100V device found in the market today. Furthermore, AON6290 delivers excellent switching performance with key figure-of-merits for RDS(ON) * Qg, RDS(ON) * CISS and RDS(ON) * COSS that are 5%, 3%, and 50% better than the current leading competitor, respectively. The benefit of this performance is that power supply designers do not need to compromise switching performance in order to reap the benefits of low on-resistance. These devices are available in a compact size DFN5x6 green package and are 100% Rg and UIS tested.
AON6290 Technical Highlights
- 100V N-channel MOSFET in a DFN5x6 package
- RDS(ON) typical = 3.8mOhms (lowest in industry)
- RDS(ON) < 4.6 mOhms at VGS = 10V
- COSS = 415 pF typical
- Qg (10V) = 63 nC typical
- Lowest RDS(ON) * CISS figure-of-merit in the market
- Lowest RDS(ON) * COSS figure-of-merit in the market
